HM4410B
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM4410B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =30V,ID =12A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V
Schematic diagram
● High density cell design for ultr...
