N-Channel Enhancement Mode Power MOSFET
Description
The HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanc...
