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HM2N15PR

H&M Semiconductor
Part Number HM2N15PR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The HM2N15PR uses advanced trench technology and design to provide e...
Datasheet PDF File HM2N15PR PDF File

HM2N15PR
HM2N15PR

Overview
N-Channel Enhancement Mode Power MOSFET Description The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits HM2N15PR D G S Schematic diagram HM2N15PR SOT-89-3L top view  Package Marking and Ordering Information Device Marking Device Device Package HM2N15PR HM2N15PR SOT-89-...


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