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AFN6800WS

Alfa-MOS
Part Number AFN6800WS
Manufacturer Alfa-MOS
Description N-Channel MOSFET
Published Dec 1, 2018
Detailed Description Alfa-MOS Technology General Description AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Datasheet PDF File AFN6800WS PDF File

AFN6800WS
AFN6800WS

Overview
Alfa-MOS Technology General Description AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 ) AFN6800WS 30V N-Channel Enhancement Mode MOSFET Features 30V/4.
0A,RDS(ON)=34mΩ@VGS=10V 30V/3.
2A,RDS(ON)=38mΩ@VGS=4.
5V 30V/2.
5A,RDS(ON)=42mΩ@VGS=2.
5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol ...


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