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AFN3015S

Alfa-MOS
Part Number AFN3015S
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology General Description AFN3015S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN3015S PDF File

AFN3015S
AFN3015S

Overview
Alfa-MOS Technology General Description AFN3015S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L ) AFN3015S 30V N-Channel Enhancement Mode MOSFET Features 30V/45A,RDS(ON)=5.
1mΩ@VGS=10V 30V/30A,RDS(ON)=6.
8mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Buck Converter − High Side − Low Side Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ordering ...


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