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CUS10S30

Toshiba

Schottky Barrier Diode


Description
Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CUS10S30 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified curre...



Toshiba

CUS10S30

PDF File CUS10S30 PDF File


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