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MS2H20120V1

Maple Semiconductor

Silicon Carbide Diode


Description
MS2H20120V1 MS2H20120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Driv...



Maple Semiconductor

MS2H20120V1

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