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STP13NM60ND

STMicroelectronics
Part Number STP13NM60ND
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Jan 21, 2019
Detailed Description STP13NM60ND Datasheet N-channel 600 V, 325 mΩ typ., 11 A FDmesh II Power MOSFET in a TO-220 package Features TAB TO-2...
Datasheet PDF File STP13NM60ND PDF File

STP13NM60ND
STP13NM60ND

Overview
STP13NM60ND Datasheet N-channel 600 V, 325 mΩ typ.
, 11 A FDmesh II Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max.
RDS(on) max.
ID STP13NM60ND 650 V 380 mΩ 11 A • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications G(1) Description S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology.
Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance.
It is ideal for bridge top...


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