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PBSS4032NZ

nexperia
Part Number PBSS4032NZ
Manufacturer nexperia
Description 4.9A NPN transistor
Published Feb 14, 2019
Detailed Description PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile ...
Datasheet PDF File PBSS4032NZ PDF File

PBSS4032NZ
PBSS4032NZ

Overview
PBSS4032NZ 30 V, 4.
9 A NPN low VCEsat (BISS) transistor Rev.
01 — 31 March 2010 Product data sheet 1.
Product profile 1.
1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PZ.
1.
2 Features and benefits „ Low collector-emitter saturation voltage VCEsat „ Optimized switching time „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energy efficiency due to less heat generation „ AEC-Q101 qualified „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications „ DC-to-DC conversion „ Battery-driven devices „ Power management „ Charging circuits 1.
4 Quick reference data Table 1.
Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter satura...


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