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HYG037N03LQ1D

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N-Channel MOSFET


Description
HYG037N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/85A RDS(ON)= 3.5mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Managemen...



HUAYI

HYG037N03LQ1D

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