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YJL2302A

Part Number	YJL2302A
Manufacturer	Yangzhou Yangjie
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Feb 26, 2019
Detailed Description	YJL2302A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Feature ●VDS=20V,ID=4.3A RDS(ON)<27mΩ@...
Datasheet	YJL2302A PDF File

Overview

YJL2302A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Feature ●VDS=20V,ID=4.
3A RDS(ON)<27mΩ@VGS=4.
5V RDS(ON)<44mΩ@VGS=2.
5V ●Epoxy meets UL 94 V-0 flammability rating ●Moisture Sensitivity Level1 ●High density cell design for low RDS(ON) ●High Speed switching ●Rugged and reliable ●SOT-23 Package Application ●Battery protection ●Load switch ●Power management ■ Maximum Ratings (TA=25℃ unless otherwise noted) Symbol Parameter VDS Drain-source Voltage VGS Gate-source Voltage ID Drain Current IDM Pulsed Drain Current PD Total Power Dissipation RthJA TJ TSTG Thermal Resistance From Junction To Ambient Operation Junction Temperature Storage Temperature Value 20...

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