P-Channel Enhancement Mode Field Effect Transistor
Description
YJL2305B
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V)
-20V
-5.4A <42 mohm <55 mohm <75 mohm
General Description
● Trench Power LV MOSFET technology
● High Density Cell Design for Low RDS(ON)
● High Speed switching
Applications
● Ba...
Similar Datasheet