N-Channel Enhancement Mode Field Effect Transistor
Description
YJG85G06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● ID (Package limited) ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested
60V
130A
85A <3.0 mohm <4.5 mohm
General Description
● Split Gate Trench MOSFET technology
● Excellent package for heat dissipation
● High densit...
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