AlGaAs Beamlead PIN Diode
Features
Low Series Resistance Low Capacitance 5 Nanosecond Switching Speed Can be Driven by a Buffered +5 V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant
Applications
Aerospace & Defense ISM
Description
The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diod...
