OPA7716WDD
Infrared LED Chip
AlGaAs / GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer AlGaAs(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage VF
2.0 V IF=50mA
Reverse Current VR
8
V IR=10uA
Power
PO 9
mW IF=50mA
W...
