DatasheetsPDF.com

HY3506B

HUAYI
Part Number HY3506B
Manufacturer HUAYI
Description N-Channel MOSFET
Published Apr 22, 2019
Detailed Description HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tes...
Datasheet PDF File HY3506B PDF File

HY3506B
HY3506B

Overview
HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.
5 m(typ.
) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power Management for Inverter Systems.
Ordering and Marking Information N-Channel MOSFET P HY3506 YYXXXJWW G B HY3506 YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.
HUAYI lead ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)