Silicon Carbide Schottky Diode
Description
GB01SLT12-214
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit QC/IF Low Thermal Resistance 175 °C Maximum Operating Temperature Temperature Independent Switching Behavior Positive Temperature Coefficient of VF Extremely Fast Switching Spee...
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