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GB01SLT12-220

GeneSiC
Part Number GB01SLT12-220
Manufacturer GeneSiC
Description Silicon Carbide Schottky Diode
Published May 6, 2019
Detailed Description GB01SLT12-220 Silicon Carbide Power Schottky Diode Features •1200 V Schottky rectifier •175 °C maximum operating temp...
Datasheet PDF File GB01SLT12-220 PDF File

GB01SLT12-220
GB01SLT12-220

Overview
GB01SLT12-220 Silicon Carbide Power Schottky Diode Features •1200 V Schottky rectifier •175 °C maximum operating temperature •Zero reverse recovery charge •Positive temperature coefficient of VF • Extremely fast switching speeds • Temperature independent switching behavior • Lowest figure of merit QC/IF Package •RoHS Compliant VRRM I F QC Case PIN 1 1 2 PIN 2 TO – 220AC = 1200 V = 1A = 4 nC CASE Advantages •Improved circuit efficiency (Lower overall cost) •Low switching losses •Ease of paralleling devices without thermal runaway •Smaller heat sink requirements •Industry's lowest reverse recovery charge •Industry's lowest device capacitance •Ideal for output switching of ...


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