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EPC2051

EPC
Part Number EPC2051
Manufacturer EPC
Description Enhancement Mode Power Transistor
Published May 17, 2019
Detailed Description eGaN® FET DATASHEET EPC2051 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 25 mΩ ID , 1.7 A D G S EPC2051 ...
Datasheet PDF File EPC2051 PDF File

EPC2051
EPC2051

Overview
eGaN® FET DATASHEET EPC2051 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 25 mΩ ID , 1.
7 A D G S EPC2051 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (p to 10,000 5 ms pulses at 150°C) ID Continuous (TA = 25°C) Pulsed ...


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