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SSM3J338R

Toshiba
Part Number SSM3J338R
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jun 22, 2019
Detailed Description MOSFETs Silicon P-Channel MOS SSM3J338R 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive vol...
Datasheet PDF File SSM3J338R PDF File

SSM3J338R
SSM3J338R

Overview
MOSFETs Silicon P-Channel MOS SSM3J338R 1.
Applications • Power Management Switches 2.
Features (1) 1.
8 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 26.
3 mΩ (typ.
) (@VGS = -1.
8 V) RDS(ON) = 20.
1 mΩ (typ.
) (@VGS = -2.
5 V) RDS(ON) = 15.
9 mΩ (typ.
) (@VGS = -4.
5 V) 3.
Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2021-09-16 Rev.
2.
0 SSM3J338R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±10 Drain current (DC)...


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