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HM4812

H&M Semiconductor
Part Number HM4812
Manufacturer H&M Semiconductor
Description Dual N-Channel Enhancement Mode Power MOSFET
Published Jun 24, 2019
Detailed Description HM4812 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4812 uses advanced trench technology to provide ...
Datasheet PDF File HM4812 PDF File

HM4812
HM4812

Overview
HM4812 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch and PWM applications.
Genera Features ● VDS = 30V,ID = 7A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Load switch ●PWM application Schematic diagram HM482 Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4812 HM4812 SOP-8 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Ma...


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