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BAV70

Part Number	BAV70
Manufacturer	Toshiba
Description	Silicon Epitaxial Planar Switching Diodes
Published	Jul 8, 2019
Detailed Description	Switching Diodes Silicon Epitaxial Planar BAV70 1. Applications • Ultra-High-Speed Switching 2. Packaging and Internal C...
Datasheet	BAV70 PDF File

Overview

Switching Diodes Silicon Epitaxial Planar BAV70 1.
Applications • Ultra-High-Speed Switching 2.
Packaging and Internal Circuit BAV70 1: Anode 1 2: Anode 2 3: Cathode SOT23 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-repetitive peak forward surge current Power dissipation VRM VR IO IFM IFSM PD (Note 1) (Note 1) (Note 1), (Note 2) (Note 3) 100 100 215 500 2 150 320 V mA A mW Junction temperature Storage temperature Tj Tstg 150 -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high tempera...

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