1N5823 ,1N5824 ,1N5825
1N5823 and 1N5825 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt...
