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H1008

Part Number	H1008
Manufacturer	Huashan
Description	NPN SILICON TRANSISTOR
Published	Oct 16, 2019
Detailed Description	Shantou Huashan Electronic Devices Co.,Ltd. NPN S I LI C O N T R AN S I S T O H1008 █ █ ABSOLUTE MAXIMUM RATINGS（Ta=2...
Datasheet	H1008 PDF File

Overview

Shantou Huashan Electronic Devices Co.
,Ltd.
NPN S I LI C O N T R AN S I S T O H1008 █ █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………800mW VCBO——Collector-Base Voltage………………………………80V VCEO——Collector-Emitter Voltage……………………………60V VEBO——Emitter-Base Voltage………………………………8V IC——Collector Current……………………………………700mA TO-92 1―Emitter，E 2―Base，B 3―Collector，C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BVCEO BVEBO fT Cob Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base...

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