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EPC2033

Part Number	EPC2033
Manufacturer	EPC
Description	Power Transistor
Published	Nov 26, 2019
Detailed Description	eGaN® FET DATASHEET EPC2033 – Enhancement Mode Power Transistor VDS , 150 V RDS(on) , 7 mΩ ID , 48 A D G S EPC2033 E...
Datasheet	EPC2033 PDF File

Overview

eGaN® FET DATASHEET EPC2033 – Enhancement Mode Power Transistor VDS , 150 V RDS(on) , 7 mΩ ID , 48 A D G S EPC2033 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25°C, RθJA = 4°C/W) Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Vo...

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