Power Transistor
Description
eGaN® FET DATASHEET
EPC2016 – Enhancement Mode Power Transistor
VDSS , 100 V RDS(ON) , 16 mW ID , 11 A
NEW PRODUCT
EPC2016
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mo...
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