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FDS6900AS

ON Semiconductor
Part Number FDS6900AS
Manufacturer ON Semiconductor
Description Dual N-Channel MOSFET
Published Mar 10, 2020
Detailed Description DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, POWERTRENCH), SyncFETt FDS6900AS, FDS6900AS-G General Description ...
Datasheet PDF File FDS6900AS PDF File

FDS6900AS
FDS6900AS

Overview
DATA SHEET www.
onsemi.
com MOSFET – Dual, N-Channel, POWERTRENCH), SyncFETt FDS6900AS, FDS6900AS-G General Description The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.
FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency.
The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses.
Q2 also includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.
Features • Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.
2 A, 30 V ♦ RDS(on) = 22 mW at VGS = 10 V ♦ RDS(on) = 28 mW at VGS = 4.
5 V • Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.
9 A, 30 V ♦ RDS(on) = 27 mW at VGS = 10 V ♦ RDS(on) = 34 mW at VGS = 4.
5 V • 100% RG (Gate Resistance) Tested • These Devices are Pb−Free and are RoHS Compliant Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Q2 Q1 Units VDSS VGSS Drain−Source Voltage Gate−Source Voltage 30 30 V ±20 ±20 V ID Drain Current − Continuous (Note 1a) − Pulsed A 8.
2 6.
9 30 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.
6 (Note 1b) 1 (Note 1c) 0.
9 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
S1D2 S1D2 S1D2 G1 S2 G2 D1 Pin 1 D1 SOIC8 CASE 751EB ELECTRICAL CONNECTION 1 8 2 Q1 7 3 6 4 Q2 5 Dual N−Channel SyncFet MARKING DIAGRAM FDS6900AS ALYW FDS6900AS = S...


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