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FGH75N60UF

ON Semiconductor
Part Number FGH75N60UF
Manufacturer ON Semiconductor
Description IGBT
Published Apr 1, 2020
Detailed Description IGBT - Field Stop 600 V, 75 A FGH75N60UF Description Using novel field stop IGBT technology, ON Semiconductor’s field st...
Datasheet PDF File FGH75N60UF PDF File

FGH75N60UF
FGH75N60UF

Overview
IGBT - Field Stop 600 V, 75 A FGH75N60UF Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.
9 V (Typ.
) @ IC = 75 A • High Input Impedance • Fast Switching • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverters, UPS, Welder, PFC www.
onsemi.
com VCES 600 V IC 75 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH75N60 UF © Semiconductor Components Industries, LLC, 2008 March, 2020 − Rev.
2 $Y &Z &3 &K FGH75N60UF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FGH75N60UF/D FGH75N60UF ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate−to−Emitter Voltage 600 V ±20 V ±30 V IC Collector Current TC = 25°C 150 A TC = 100°C 75 A ICM (Note 1) Pulsed Collector Current TC = 25°C 225 A PD Maximum Power Dissipation TC = 25°C 452 W TC = 100°C 181 W TJ Operating Junction Temperature −55 to +150 °C TSTG Storage Temperature Range −55 to +150 °C TL Maximum Lead Temp.
for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Repetitive rating: Pulse width limited by max.
junction temperature.
THERMAL CHARACTERISTICS Symbol Parameter RqJC (IGBT) RqJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ.
− − Max.
0.
276 40 Unit _C/W _C/W P...


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