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NXH80B120H2Q0

ON Semiconductor
Part Number NXH80B120H2Q0
Manufacturer ON Semiconductor
Description Dual Boost Power Module
Published Apr 1, 2020
Detailed Description Si/SiC Hybrid Module – EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package NXH80B120H2Q0 The N...
Datasheet PDF File NXH80B120H2Q0 PDF File

NXH80B120H2Q0
NXH80B120H2Q0

Overview
Si/SiC Hybrid Module – EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package NXH80B120H2Q0 The NXH80B120H2Q0 is a high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes including on−board thermistor.
Features • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module • 1200 V FSII IGBT VCE(SAT) = 2.
2 V • 1200 V SiC Diode VF = 1.
4 V • Low Inductive Layout • Solderable Pins • Thermistor • Bare Copper and Nickel−Plated DBC Options Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Energy Storage Systems 7, 8 D5 Bypass Diode 5,6,15,16 D3 Boost Diode D6 Bypass Diode D4 Boost Diode 13,14 9,10 11,12 T1 Boost IGBT 1 1 D1 IGBT Protection Diode D2 IGBT Protection Diode T2 Boost IGBT 2 20 DATA SHEET www.
onsemi.
com Q0BOOST CASE 180AJ MARKING DIAGRAM NXH80B120H2Q0Sxx ATYYWW NXH80B120H2Q0Sxx = Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering, marking and shipping information on page 4 of this data sheet.
2 19 21 22 3,4 17,18 NTC Thermistor Figure 1.
NXH80B120H2Q0SG Schematic Diagram © Semiconductor Components Industries, LLC, 2016 1 March, 2023 − Rev.
4 Publication Order Number: NXH80B120H2Q0/D NXH80B120H2Q0 Table 1.
ABSOLUTE MAXIMUM RATINGS (Note 1) TJ = 25°C unless otherwise noted Rating Symbol Value Unit BOOST IGBT Collector−Emitter Voltage VCES 1200 V Gate−Emitter Voltage VGE ±20 V Continuous Collector Current @ Th = 80°C (TJ = 175°C) IC 41 A Pulsed Collector Current (TJ = 175°C) ICpulse 123 A Maximum Power Dissipation @ Th = 80°C (TJ = 175°C) Ptot 103 W Short Circuit Withstand Time @ VGE = 15 V, VCE = 600 V, TJ ≤ 150°C Tsc 5 ms Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C BOOST DIODE Peak Repetitive Reverse Voltage VRRM 1200 V Continuous Forward Current @ Th = 80°C (TJ ...


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