SCT10N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package
3 2 1
HiP247™
D(2, TAB)
Features
Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance
Applications
Solar invert...
