High-Voltage Trench MOS Barrier Schottky Rectifier
Description
www.vishay.com
VB20120SG-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
A NC VB20120SG
NC K A HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency opera...
