RF Power GaN Transistors
Description
NXP Semiconductors Technical Data
RF Power GaN Transistors
These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in
CW, pulse, cycling and linear applications. These high gain, high efficiency
devices are easy to use and will provide long life in even the most d...
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