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VBT4045BP-E3

Vishay
Part Number VBT4045BP-E3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published May 6, 2020
Detailed Description www.vishay.com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypas...
Datasheet PDF File VBT4045BP-E3 PDF File

VBT4045BP-E3
VBT4045BP-E3

Overview
www.
vishay.
com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
28 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PIN 1 PIN 2 K HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A TOP max.
(AC mode) TJ max.
(DC forward current) Package Circuit configuration 40...


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