CTH1606NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance
RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.5V, ID= 10A
Continuous Drain Current at TC=25℃ID =16A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH1606NS-T52 is the N-C...
