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CT2N7002E-R3

CT Micro
Part Number CT2N7002E-R3
Manufacturer CT Micro
Description N-Channel MOSFET
Published May 20, 2020
Detailed Description CT2N7002E-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resista...
Datasheet PDF File CT2N7002E-R3 PDF File

CT2N7002E-R3
CT2N7002E-R3

Overview
CT2N7002E-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance RDS(ON) 4.
15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.
7Ω, at VGS= 5.
0V, IDS= 500mA ℃• Continuous Drain Current at TA=25 ,ID = 500mA • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection Applications • Cellular phone • Notebook • Power management Description The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Package Outline Schematic Drain Drain Gate...


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