Process Geometry
Description
InterFET
Product Folder
Technical Support
Order Now
N0132S
N0132S Process Geometry
Features
Low Noise: 1.2 nV/√Hz Typical Typical Input Capacitance: 13pF Typical Breakdown Voltage: -45V High Input Impedance Small Die: 518um X 518um X 203um Bond Pads: 90um X 90um Substrate Connected to Gate Au Back-Side Finish
Applications
Low Noise Am...
Similar Datasheet
