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TGI7785-120L

Part Number	TGI7785-120L
Manufacturer	Toshiba
Description	MICROWAVE POWER GaN HEMT
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44....
Datasheet	TGI7785-120L PDF File

Overview

MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.
0dBm at Pin= 44.
0dBm ･HIGH GAIN GL= 11.
0dB at Pin= 20.
0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.
)= -25dBc at Pout= 44.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency SYMBOL CONDITIONS Pout IDS1 add VDS= 24V IDSset= 4.
0A f = 7.
7 to 8.
5GHz @Pin= 44dBm Linear Gain GL @Pin= 20dBm Gain flatness 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise G IM3 IDS2 Tch Two-Tone Test Po= 44.
0dBm, f= 5MHz (Single Carrier Level) (VDS X IDS + Pin – Po...

Similar Datasheet

TGI7785-120L MICROWAVE POWER GaN HEMT - Toshiba

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