DatasheetsPDF.com

TGI5059-120L

Part Number	TGI5059-120L
Manufacturer	Toshiba
Description	MICROWAVE POWER GaN HEMT
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaN HEMT TGI5059-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 42....
Datasheet	TGI5059-120L PDF File

Overview

MICROWAVE POWER GaN HEMT TGI5059-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.
0dBm at Pin= 42.
0dBm ･HIGH GAIN GL= 13.
5dB at Pin= 20.
0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.
)= -25dBc at Pout= 44.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 4.
0A f = 5.
0 to 5.
9GHz @Pin= 42dBm dBm A % Linear Gain Gain flatness GL dB @Pin= 20dBm G dB 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two-Tone Test dBc @Po=44.
0dBm, f= 5MHz (Single Carrier Level) A Channel Tempera...

Similar Datasheet

TGI5059-120L MICROWAVE POWER GaN HEMT - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)