GaN FET
Description
TP65H050BS
650V GaN FET in TO-263 (source tab)
Preliminary Datasheet
Description
The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, ...
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