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2SA1012-D

Part Number	2SA1012-D
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 5, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D DESCRIPTION ·Low Collector Saturation Voltage :VCE(...
Datasheet	2SA1012-D PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.
4(V)(Max)@IC= -3A ·High Switching Speed ·“-D”= TO-252 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ELECTRICAL CHARAC...

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