NPN Transistor
Description
isc Silicon NPN Power Transistor
2SD288
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 55V(Min) ·Collector Power Dissipation-
: PC= 25W(Max)@ TC= 25℃
APPLICATIONS ·Designed for power regulator, low frequency high power
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80...
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