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3DA98J

Part Number	3DA98J
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA98J DESCRIPTION ·J: High DC Current Gain- hFE: 30-50（1.5A/5...
Datasheet	3DA98J PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA98J DESCRIPTION ·J: High DC Current Gain- hFE: 30-50（1.
5A/5V） ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PA...

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