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3DD200D

Part Number	3DD200D
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·...
Datasheet	3DD200D PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.
4V(Max)@ IC = 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB Ba...

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