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BDT61BF

Part Number	BDT61BF
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61BF DESCRIPTION ·High DC Current Gain ·Low Satu...
Datasheet	BDT61BF PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61BF DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60BF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ ...

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