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BDX24

Part Number	BDX24
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon NPN Power Transistor BDX24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Excell...
Datasheet	BDX24 PDF File

Overview

isc Silicon NPN Power Transistor BDX24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature ...

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