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FJA4210

INCHANGE
Part Number FJA4210
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 8, 2020
Detailed Description isc Silicon PNP Power Transistor FJA4210 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·DC ...
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FJA4210
FJA4210

Overview
isc Silicon PNP Power Transistor FJA4210 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= -3A ·Complement to Type FJA4310 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1.
5 A 100 W 150 ℃ Tstg Storage Tem...


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