DatasheetsPDF.com

H1061

Part Number	H1061
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE =60-200@ IC= 1A ·Low Collector Saturation Voltage ...
Datasheet	H1061 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE =60-200@ IC= 1A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 4 ICM Collector Current-Peak 8 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c...

Similar Datasheet

H1008 NPN SILICON TRANSISTOR - Huashan
H100F24-2-C Relay - ETC
H1012 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES - Pulse
H1012NL 10/100 Base-T Single Port Transformer Modules - Pulse
H1013 10/100BASE-TX SINGLE PORT TRANSFORMER MODULES - Pulse
H1015 PNP SILICON TRANSISTOR - SHANTOU HUASHAN ELECTRONIC DEVICES
H1015 10/100BASE-TX SINGLE PORT TRANSFORMER MODULES - Pulse
H1015NL 10/100BASE-TX SINGLE PORT TRANSFORMER MODULES - Pulse
H1019 10/100 BASE-T SINGLE PORT TRANSFORMER MODULES - Pulse
H1020 PNP SILICON TRANSISTOR - Huashan

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)