NPN Transistor
Description
isc Silicon NPN Power Transistor
KSD1588
DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min) ·Complement to Type KSB1097 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM ...
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