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KTB631K

INCHANGE
Part Number KTB631K
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 9, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage...
Datasheet PDF File KTB631K PDF File

KTB631K
KTB631K

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.
0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type KTD600K ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 V -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 8 W 1.
5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor KTB631K isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor KTB631K ELECTRICAL CHARACTERISTICS TC=25℃ u...


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