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MJE700
PNP Transistor
Description
isc Silicon
PNP
Darlington Power
Transistor
INCHANGE Semiconductor MJE700 DESCRIPTION ·DC Current Gain— : hFE = 2000(TYP) @ IC= -2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE...
INCHANGE
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